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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 1/3 HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. Features * Charger-up time is about 1 ms faster than of a germanium transistor. * Small saturation voltage can bring less power dissipation and flashing times. TO-126ML Absolute Maximum Ratings * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) .................................................................................... 1.4 W * Maximum Voltages and Currents (Ta=25C) BVCBO Collector to Base Voltage....................................................................................... 30 V BVCEX Collector to Emitter Voltage .................................................................................... 20 V BVCEO Collector to Emitter Voltage.................................................................................... 10 V BVEBO Emitter to Base Voltage............................................................................................ 6 V IC Collector Current .............................................................................................................. 3 A IC Collector Current (Pluse) .................................................................................................. 5 A Characteristics (Ta=25C) Symbol BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE *hFE fT Cob Min. 10 6 140 Typ. 0.3 0.83 210 200 30 Max. 100 100 0.4 1.5 Unit V V nA nA V V MHZ pF Test Condition IC=1mA IE=10uA VCB=20V VBE=4V IC=3A, IB=60mA VCE=-1V, IC=-2A VCE=2V, IC=3A VCE=10V, IC=50mA VCB=10V, f=1KHZ *Pulse Test: Pulse Width 380us, Duty Cycle2% HSD879D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 125 C 75 C o o Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 2/3 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=50IB 25 C o Saturation Voltage (mV) hFE 100 75 C o hFE @ VCE=2V 125 C 25 C o o 100 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 10.0 1000 Cutoff Frequency & Collector Current VCE=10V Cutoff Frequency VBE(on) @ VCE=2V 1 10 100 1000 10000 ON Voltage 100 1.0 10 0.1 1 1 10 100 1000 Collector Current Collector Current Capacitance & Reverse-Biased Voltage 100 100 Safe Operating Area Cob Collector Current-IC (mA) Capacitance (pF) 10 10 PT=1ms 1 PT=100ms PT=1S 1 1 10 100 0.1 1 10 100 Reverse Biased Voltage (V) Forward Voltage-VCE (V) HSD879D HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2002.02.26 Page No. : 3/3 A H SD B D E F 3 2 I G 1 J M L K O H Date Code 879D Control Code C Style: Pin 1.Base 2.Collector 3.Emitter N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSD879D HSMC Product Specification |
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